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Traduction de l’étape 9

Étape 9
Thermal pads and cameras aside, let's get to those chips! On the front side of these motherboards (top: S10e, bottom: S10), we spot:
  • Thermal pads and cameras aside, let's get to those chips! On the front side of these motherboards (top: S10e, bottom: S10), we spot:

  • S10e: THGAF8T0T43BAIR 128 GB Toshiba UFS NAND flash storage

  • S10: KLUFG8R1EM-B0C1 512 GB Samsung eUFS NAND flash storage

  • Samsung K3UH7H70AM-AGCL LPDDR4X layered over Qualcomm Snapdragon 855 SoC

  • Qualcomm WCD9341 audio codec

  • Qorvo QM78062, likely a RF Fusion front-end module

  • Maxim MAX77705C PMIC

  • Skyworks SKY78160-51 Low Noise Amplifier

Maintenant que nous nous sommes débarrassés des blocs thermiques et des caméras, le marché aux puces est ouvert ! La face avant de ces cartes mères (S10e en haut et S10 en bas) recèle :

S10e : stockage flash UFS NAND de 128 Go Toshiba

S10 : stockage flash eUFS NAND de 512 Go Samsung

LPDDR4X K3UH7H70AM Samsung posé sur système sur une puce (SoC) Snapdragon 855 Qualcomm

Codec audio WCD9341 Qualcomm

Qorvo 78062, probablement module front-end RF Fusion

CI de gestion d'alimentation MAX77705C Maxim

Skyworks 78160-5

[* black] Thermal pads and cameras aside, let's get to those chips! On the front side of these motherboards (top: S10e, bottom: S10), we spot:
- [* red] S10e: 128 GB [https://business.toshiba-memory.com/en-us/product/memory/mlc-nand/ufs.html|Toshiba|new_window=true] UFS NAND flash storage
- [* red] S10: 512 GB [https://www.samsung.com/semiconductor/estorage/eufs/KLUFG8R1EM-B0C1/|Samsung|new_window=true] eUFS NAND flash storage
- [* orange] Samsung [https://www.samsung.com/semiconductor/dram/lpddr4x/K3UH7H70AM-AGCL/|K3UH7H70AM|new_window=true] LPDDR4X layered over Qualcomm [https://www.qualcomm.com/products/snapdragon-855-mobile-platform|Snapdragon 855|new_window=true] SoC
+ [* red] S10e: THGAF8T0T43BAIR 128 GB [https://business.toshiba-memory.com/en-us/product/memory/mlc-nand/ufs.html|Toshiba|new_window=true] UFS NAND flash storage
+ [* red] S10: KLUFG8R1EM-B0C1 512 GB [https://www.samsung.com/semiconductor/estorage/eufs/KLUFG8R1EM-B0C1/|Samsung|new_window=true] eUFS NAND flash storage
+ [* orange] Samsung [https://www.samsung.com/semiconductor/dram/lpddr4x/K3UH7H70AM-AGCL/|K3UH7H70AM-AGCL|new_window=true] LPDDR4X layered over Qualcomm [https://www.qualcomm.com/products/snapdragon-855-mobile-platform|Snapdragon 855|new_window=true] SoC
[* yellow] Qualcomm [https://www.qualcomm.com/products/wcd9341|WCD9341|new_window=true] audio codec
- [* green] Qorvo 78062, likely a [https://www.qorvo.com/applications/mobile-products/rf-fusion|RF Fusion|new_window=true] front-end module
+ [* green] Qorvo QM78062, likely a [https://www.qorvo.com/applications/mobile-products/rf-fusion|RF Fusion|new_window=true] front-end module
[* light_blue] Maxim MAX77705C PMIC
- [* blue] Skyworks 78160-5
+ [* blue] Skyworks [link|https://store.skyworksinc.com/products/detail/sky7816051-skyworks/625141/|SKY78160-51|new_window=true] Low Noise Amplifier

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